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RJK0393DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Features
High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) * Pb-free * Halogen-free * * * * *
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5678 DDDD
5678
4 G
4 321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP EAR Note 2 Pch Note3 ch-C Tch Tstg
Note 2
Ratings 30 20 40 160 40 16 25.6 40 3.13 150 -55 to +150
Unit V V A A A A mJ W C/W C C
REJ03G1784-0200 Rev.2.00 Apr 03, 2009 Page 1 of 6
RJK0393DPA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 3.3 4.2 100 3270 430 225 1.4 21 9.5 4.7 13.2 6.0 52 7.1 0.83 23.5 Max -- 0.1 1 2.5 4.3 5.9 -- -- -- -- -- -- -- -- -- -- -- -- 1.08 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 4.5 V, ID = 40 A VGS = 10 V, ID = 20 A, VDD 10 V, RL = 0.5 , Rg = 4.7 IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1784-0200 Rev.2.00 Apr 03, 2009 Page 2 of 6
RJK0393DPA
Main Characteristics
Power vs. Temperature Derating
80 1000 10 s 100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current ID (A)
10
10
0
ms
s
1m s
40
10
DC n tio era Op
20
Operation in 1 this area is limited by RDS(on) Tc = 25 C 1 shot Pulse 0.3 1 3
0
50
100
150
200
0.1 0.1
10
30
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 10 V 2.9 V 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
4.5 V 2.7 V
Drain Current ID (A)
40
40
30
30 25C Tc = 75C 10 -25C
20 2.5 V 10
20
VGS = 2.4 V
Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Registance RDS(on) (m)
Drain to Source Saturation Voltage VDS(on) (mV)
200 Pulse Test 160
100 Pulse Test 50
120
20 10 VGS = 4.5 V 5 2 1 1 3 10 30 100 300 1000 10 V
80
ID = 20 A 10 A 5A
40
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1784-0200 Rev.2.00 Apr 03, 2009 Page 3 of 6
RJK0393DPA
Static Drain to Source on State Resistance vs. Temperature
Drain to Source On State Registance RDS(on) (m)
10
Pulse Test
Typical Capacitance vs. Drain to Source Voltage
10000
Ciss
ID = 5 A, 10 A, 20 A
Capacitance C (pF)
8
3000 1000
Coss
6
VGS = 4.5 V
300 100 30 10
VGS = 0 f = 1 MHz
4
5 A, 10 A, 20 A
Crss
2 0 -25
10 V
0
25
50
75
100 125 150
0
10
20
30
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
50
Reverse Drain Current vs. Source to Drain Voltage
20
50
Gate to Source Voltage VGS (V)
Reverse Drain Current IDR (A)
ID = 40 A VGS VDS VDD = 25 V 10 V
10 V
40
16
40
5V
30
12
30
VGS = 0, -5 V
20
8
20
10
VDD = 25 V 10 V
4 0 50
10
Pulse Test
0
10
20
30
40
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
50
IAP = 16 A VDD = 15 V duty < 0.1% Rg 50
40
30
20
10 0 25
50
75
100
125
150
Channel Temperature Tch (C)
REJ03G1784-0200 Rev.2.00 Apr 03, 2009 Page 4 of 6
RJK0393DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
D=1 1 0.5
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 3.13C/W, Tc = 25C
PDM
0.05 0.02
0.0 1
h p ot uls e
D=
PW T
PW T
1s
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 L *IAP2 * VDSS VDSS - VDD
V(BR)DSS
VDS Monitor
L IAP Monitor
IAP VDS VDD ID
Rg
D. U. T
Vin 15 V
50 0
VDD
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90% td(on)
90% td(off) tf
tr
REJ03G1784-0200 Rev.2.00 Apr 03, 2009 Page 5 of 6
RJK0393DPA
Package Dimensions
Package Name WPAK JEITA Package Code - RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
3.9 0.2
6.1
5.9
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 0.15
3.8 0.2
+0.1 -0.3
+0.1 -0.2
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part No. RJK0393DPA-00-J53 Quantity 3000 pcs Taping Shipping Container
REJ03G1784-0200 Rev.2.00 Apr 03, 2009 Page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2

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